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HMP112S6EFR6C-Y5 - Hynix 1GB DDR2-667MHz PC2-5300 non-ECC Unbuffered CL5 200-Pin SoDimm Memory Module
HMP112S6EFR6C-Y5 - Hynix 1GB DDR2-667MHz PC2-5300 non-ECC Unbuffered CL5 200-Pin SoDimm Memory Module
Mfr Part#:
Availabilty: In stock
Condition:
Refurbished
Manufacturer:
Hynix
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ContactHynix 1GB DDR2 CL5 memory module 1 x 1 GB 667 MHz
200pin Unbuffered DDR2-667 SDRAM SO-DIMMs based on 1Gb version E, 128Mx64, CL5
- Laptop 1 GB DDR2 667 MHz Dual-channel
- 200-pin SO-DIMM 1 x 1 GB
- CAS latency: 5
- 1.8 V
About Hynix 1GB DDR2 CL5, 1 GB, 1 x 1 GB, DDR2, 667 MHz, 200-pin SO-DIMM
Hynix 1GB DDR2 CL5. Component for: Laptop, Internal memory: 1 GB, Memory layout (modules x size): 1 x 1 GB, Internal memory type: DDR2, Memory clock speed: 667 MHz, Memory form factor: 200-pin SO-DIMM, CAS latency: 5
This Hynix unbuffered Small Outline Dual In-Line Memory Module (DIMM) series consists of 1Gb version E DDR2 SDRAMs in Fine Ball Grid Array (FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 1Gb version E based Unbuffered DDR2 SO-DIMM series provide a high performance 8 byte interface in 67.60mm width form factor of industry standard. It is suitable for easy interchange and addition.- JEDEC standard Double Data Rate 2 Synchronous DRAMs (DDR2 SDRAMs) with 1.8V +/- 0.1V Power Supply.
- All inputs and outputs are compatible with SSTL_1.8 interface.
- Posted CAS.
- Programmable CAS Latency 3,4,5, and 6.
- OCD (Off-Chip Driver Impedance Adjustment) and ODT (On-Die Termination).
- Fully differential clock operations (CK & CK).
- Programmable Burst Length 4 / 8 with both sequential and interleave mode.
- Auto refresh and self refresh supported.
- 8192 refresh cycles / 64ms.
- Serial presence detect with EEPROM.
- DDR2 SDRAM Package: 60 ball(x8), 84 ball(x16) FBGA.
- 67.60 x 30.00 mm form factor.
- RoHS compliant & Halogen-free.
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