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M378B5273CH0-CH9 - Samsung 4GB 1333MHz DDR3 PC3-10600 Unbuffered non-ECC CL9 240-Pin DIMM Dual Rank Memory
M378B5273CH0-CH9 - Samsung 4GB 1333MHz DDR3 PC3-10600 Unbuffered non-ECC CL9 240-Pin DIMM Dual Rank Memory
Mfr Part#:
Availabilty: In stock
Condition:
New
Manufacturer:
Samsung
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ContactSamsung 4GB DDR3 1333MHz Unbuffered DIMM memory module 2 x 2 GB
4GB DDR3 1333MHz Unbuffered DIMM
- PC/Server 4 GB DDR3 1333 MHz
- 240-pin DIMM 2 x 2 GB
- CAS latency: 9
- 1.5 V
About Samsung 4GB DDR3 1333MHz Unbuffered DIMM, 4 GB, 2 x 2 GB, DDR3, 1333 MHz, 240-pin DIMM
Samsung 4GB DDR3 1333MHz Unbuffered DIMM. Component for: PC/Server, Internal memory: 4 GB, Memory layout (modules x size): 2 x 2 GB, Internal memory type: DDR3, Memory clock speed: 1333 MHz, Memory form factor: 240-pin DIMM, CAS latency: 9
First in the Market with Advanced DDR3.Double Data Rate Three, Synchronous DRAM, or DDR3, is the new generation of high performance, ultra-low-power memory interface technology used in high performance servers, desktops and notebooks. As the number one supplier in memory, Samsung continues to lead the industry with cutting-edge SDRAM products from the first DDR in 1997, DDR2 in 2001 and DDR3 in 2005. Samsung's high performance main memory solutions are based on JEDEC standards and leverage the company's leadership in advanced research and development of semiconductor process technology.
Samsung's DDR3 brings new levels of performance to notebooks, desktops and servers and pushes the envelope in key areas like power consumption, speed and bandwidth. Our recent 30nm class, 1.35V, 2Gb DDR3 is the world's first ultra-low-power memory technology, with more than a 76% power savings over traditional DDR2 at 2x the bandwidth. When you're ready to make a move to DDR3 or are considering upgrading your systems, we're here to provide the best optimal solution for enhancing your competitive edge.
Customer Questions
Overview
Condition:
New
Manufacturer:
Samsung
Stock:
In Stock
Features
Buffered memory type
Unregistered (unbuffered)
CAS latency
9
Internal memory
4 GB
Memory layout (modules x size)
2 x 2 GB
Internal memory type
DDR3
Memory clock speed
1333 MHz
Component for
PC/Server
Memory form factor
240-pin DIMM
ECC
No
Memory voltage
1.5 V
Packaging data
Package type
DIMM
Other features
Chips organisation
512Mx64
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