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M470T2864EH3-CF7 - Samsung 1GB 800MHz DDR2 PC2-6400 Unbuffered non-ECC CL6 200-Pin Sodimm Dual Rank Memory
M470T2864EH3-CF7 - Samsung 1GB 800MHz DDR2 PC2-6400 Unbuffered non-ECC CL6 200-Pin Sodimm Dual Rank Memory
Mfr Part#:
Availabilty: In stock
Condition:
Refurbished
Manufacturer:
Samsung
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ContactSamsung M470T2864EH3-CF7 memory module 1 GB 1 x 1 GB DDR2 800 MHz
1GB DDR2, 800 MHz, CL6, 1.8V
- Laptop 1 GB DDR2 800 MHz
- 200-pin SO-DIMM 1 x 1 GB
- CAS latency: 6
- 1.8 V
About Samsung M470T2864EH3-CF7, 1 GB, 1 x 1 GB, DDR2, 800 MHz, 200-pin SO-DIMM
Samsung M470T2864EH3-CF7. Component for: Laptop, Internal memory: 1 GB, Memory layout (modules x size): 1 x 1 GB, Internal memory type: DDR2, Memory clock speed: 800 MHz, Memory form factor: 200-pin SO-DIMM, CAS latency: 6
Customer Questions
Overview
Condition:
Refurbished
Manufacturer:
Samsung
Stock:
In Stock
Features
Buffered memory type
Unregistered (unbuffered)
CAS latency
6
Internal memory
1 GB
Memory layout (modules x size)
1 x 1 GB
Internal memory type
DDR2
Memory clock speed
800 MHz
Component for
Laptop
Memory form factor
200-pin SO-DIMM
ECC
No
Memory ranking
2
Memory voltage
1.8 V
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