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M471B1G73QH0-YK0 - Samsung 8GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory
M471B1G73QH0-YK0 - Samsung 8GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory
Mfr Part#:
Availabilty: In stock
Condition:
New
Manufacturer:
Samsung
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ContactSamsung 8GB PC3-12800 memory module 1 x 8 GB DDR3 1600 MHz
8GB PC3-12800 DDR3-1600MHz non-ECC Unbuffered CL11
- 8 GB DDR3 1600 MHz
- 204-pin SO-DIMM 1 x 8 GB
- CAS latency: 11
- 1.35 V
About Samsung 8GB PC3-12800, 8 GB, 1 x 8 GB, DDR3, 1600 MHz, 204-pin SO-DIMM
Samsung 8GB PC3-12800. Internal memory: 8 GB, Memory layout (modules x size): 1 x 8 GB, Internal memory type: DDR3, Memory clock speed: 1600 MHz, Memory form factor: 204-pin SO-DIMM, CAS latency: 11
- Stable Operation- High Quality
- Easy to Use
Customer Questions
Overview
Condition:
New
Manufacturer:
Samsung
Stock:
In Stock
Features
Buffered memory type
Unregistered (unbuffered)
CAS latency
11
Internal memory
8 GB
Memory layout (modules x size)
1 x 8 GB
Internal memory type
DDR3
Memory clock speed
1600 MHz
Memory form factor
204-pin SO-DIMM
ECC
No
Memory voltage
1.35 V
Weight & dimensions
Height
30 mm
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