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M471B5273EB0-CK0 - Samsung 4GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm Dual Rank Memory
M471B5273EB0-CK0 - Samsung 4GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm Dual Rank Memory
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Samsung
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ContactSamsung M471B5273EB0-CK0 memory module 4 GB 1 x 8 GB DDR3 1600 MHz
4 GB DDR3 SODIMM, 1600 MHz, 2R x 8, (512M x 8) x 18, 1.5 V
- Supports x8 / x16 / up to 2 ranks per DIMM and 2DPC configuration
- For systems with limited space issues
- 4 GB DDR3 SODIMM, 1600 MHz, 2R x 8, (512M x 8) x 18, 1.5 V
- Laptop 4 GB DDR3 1600 MHz
- 204-pin SO-DIMM 1 x 8 GB
- CAS latency: 11
- 1.35,1.5 V
About Samsung M471B5273EB0-CK0, 4 GB, 1 x 8 GB, DDR3, 1600 MHz, 204-pin SO-DIMM
Samsung M471B5273EB0-CK0. Component for: Laptop, Internal memory: 4 GB, Memory layout (modules x size): 1 x 8 GB, Internal memory type: DDR3, Memory clock speed: 1600 MHz, Memory form factor: 204-pin SO-DIMM, CAS latency: 11
Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.
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