MTA4ATF51264HZ-3G2J1 - Micron 4GB 3200MHz DDR4 PC4-25600 Non-ECC CL22 260-Pin SoDimm 1.2V Single Rank x16 Memory Module
Availabilty: In stock
Refurbished
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PAYMENT
Micron MTA4ATF51264HZ-3G2 memory module 4 GB 1 x 4 GB DDR4 3200 MHz
4GB (x64, SR) 260-Pin, DDR4, SODIMM
- defined in the component data sheet
- 260-pin, small-outline dual in-line memory module
- (SODIMM)
- Fast data transfer rates: PC4-3200, PC4-2666, or
- PC4-2400
- 4GB (512 Meg x 64)
- V DD = 1.20V (NOM)
- V PP = 2.5V (NOM)
- V DDSPD = 2.5V (NOM)
- Nominal and dynamic on-die termination (ODT) for
- data, strobe, and mask signals
- Low-power auto self refresh (LPASR)
- Data bus inversion (DBI) for data bus
- On-die V REFDQ generation and calibration
- Single-rank
- On-board I 2 C serial presence-detect (SPD) EEPROM
- 8 internal banks; 2 groups of 4 banks each
- Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
- Selectable BC4 or BL8 on-the-fly (OTF)
- Gold edge contacts
- Halogen-free
- Fly-by topology
- Terminated control command and address bus
- 4GB (x64, SR) 260-Pin, DDR4, SODIMM
- Laptop 4 GB DDR4 3200 MHz
- 260-pin SO-DIMM 1 x 4 GB
- CAS latency: 22
- 1.2 V
About Micron MTA4ATF51264HZ-3G2, 4 GB, 1 x 4 GB, DDR4, 3200 MHz, 260-pin SO-DIMM
Micron MTA4ATF51264HZ-3G2. Component for: Laptop, Internal memory: 4 GB, Memory layout (modules x size): 1 x 4 GB, Internal memory type: DDR4, Memory clock speed: 3200 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 22
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