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MT16KTF1G64HZ-1G6E1 - Micron 8GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
MT16KTF1G64HZ-1G6E1 - Micron 8GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
Mfr Part#:
Availabilty: In stock
Condition:
Refurbished
GTIN:
8592978043186
Manufacturer:
Micron
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ContactMicron MT16KTF1G64HZ-1G6E1 memory module 8 GB 1 x 8 GB DDR3L 1600 MHz
8GB DDR3L SO-DIMM, 1600 MHz, 204-pin, 1.35 V
- Laptop 8 GB DDR3L 1600 MHz
- 204-pin SO-DIMM 1 x 8 GB
- CAS latency: 11
- 1.35 V
About Micron MT16KTF1G64HZ-1G6E1, 8 GB, 1 x 8 GB, DDR3L, 1600 MHz, 204-pin SO-DIMM
Micron MT16KTF1G64HZ-1G6E1. Component for: Laptop, Internal memory: 8 GB, Memory layout (modules x size): 1 x 8 GB, Internal memory type: DDR3L, Memory clock speed: 1600 MHz, Memory form factor: 204-pin SO-DIMM, CAS latency: 11
- DDR3L functionality and operations supported as defined in the component data sheet- 204-pin, small outline dual in-line memory module (SODIMM)
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Dual rank
- Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
- On-board I2C serial presence-detect (SPD) EEPROM
- Selectable BC4 or BL8 on-the-fly (OTF)
- Gold edge contacts
- Halogen-free
- Fly-by topology
- Terminated control, command, and address bus
Customer Questions
Overview
Condition:
Refurbished
Manufacturer:
Micron
Stock:
In Stock
Features
CAS latency
11
Internal memory
8 GB
Memory layout (modules x size)
1 x 8 GB
Internal memory type
DDR3L
Memory clock speed
1600 MHz
Component for
Laptop
Memory form factor
204-pin SO-DIMM
ECC
No
Memory ranking
2
Memory voltage
1.35 V
Module configuration
512M x 8
Lead plating
Gold
Operational conditions
Operating temperature (T-T)
0 - 95 °C
Sustainability
Sustainability certificates
RoHS
Doesn't contain
Halogen
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