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MTA8ATF51264HZ-2G1A2 - Micron 4GB 2133MHz DDR4 PC4-17000 Unbuffered ECC CL15 260-Pin Sodimm 1.2V Single Rank Memory
MTA8ATF51264HZ-2G1A2 - Micron 4GB 2133MHz DDR4 PC4-17000 Unbuffered ECC CL15 260-Pin Sodimm 1.2V Single Rank Memory
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Availabilty: In stock
Manufacturer:
Micron
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ContactMicron 4GB DDR4 memory module 1 x 4 GB 2133 MHz
4GB (x64, SR), DDR4, 260-Pin SODIMM
- Laptop 4 GB DDR4 2133 MHz
- 260-pin SO-DIMM 1 x 4 GB
- CAS latency: 15
- 1.2 V
About Micron 4GB DDR4, 4 GB, 1 x 4 GB, DDR4, 2133 MHz, 260-pin SO-DIMM, Green
Micron 4GB DDR4. Component for: Laptop, Internal memory: 4 GB, Memory layout (modules x size): 1 x 4 GB, Internal memory type: DDR4, Memory clock speed: 2133 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 15, Product colour: Green
Features:- DDR4 functionality and operations supported as defined in the component data sheet
- 260-pin, small-outline dual in-line memory module (SODIMM)
- Fast data transfer rates: PC4-2666, PC4-2400, or PC4-2133
- 4GB (512 Meg x 72)
- V DD = 1.20V (NOM)
- V PP = 2.5V (NOM)
- V DDSPD = 2.5V (NOM)
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Low-power auto self refresh (LPASR)
- Data bus inversion (DBI) for data bus
- On-die V REFDQ generation and calibration
- Single-rank
- Onboard I 2 C serial presence-detect (SPD) EEPROM
- 16 internal banks; 4 groups of 4 banks each
- Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
- Selectable BC4 or BL8 on-the-fly (OTF)
- Gold edge contacts
- Halogen-free
- Fly-by topology
- Terminated control command and address bus
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