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MN8GSD31600LV - PNY 8GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDimm Dual Rank Memory Module
MN8GSD31600LV - PNY 8GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDimm Dual Rank Memory Module
Mfr Part#:
Availabilty: In stock
Condition:
Refurbished
GTIN:
0751492586045
751492586045
Manufacturer:
PNY
Seeking a large quantity of MN8GSD31600LV, or have a target price in mind? Contact us at (855) 483-7810 or simply Request a Bulk Quote. Our sales team will promptly respond with a discounted price tailored to your needs.
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ContactPNY 8GB DDR3L SO-DIMM memory module 1 x 8 GB 1600 MHz
8GB DDR3L SO-DIMM, 1600MHz, 1.35 V
- Laptop 8 GB DDR3L 1600 MHz
- 204-pin SO-DIMM 1 x 8 GB
- CAS latency: 11
- 1.35 V
About PNY 8GB DDR3L SO-DIMM, 8 GB, 1 x 8 GB, DDR3L, 1600 MHz, 204-pin SO-DIMM
PNY 8GB DDR3L SO-DIMM. Component for: Laptop, Internal memory: 8 GB, Memory layout (modules x size): 1 x 8 GB, Internal memory type: DDR3L, Memory clock speed: 1600 MHz, Memory form factor: 204-pin SO-DIMM, CAS latency: 11
Boost the performance of your PC. PNY memory upgrades will prove to be an outstanding value now and in the future.DDR3 is the next generation of DDR memory. DDR3 memory features faster speeds, greater bandwidth, lower power consumption and enhanced thermal performance. Although DDR3 modules are the same physical dimension as DDR2 and DDR modules, the plug-in connector configuration is different and as such DDR3 modules are not compatible with PCs requiring DDR2 modules, and vice-versa.
Customer Questions
Overview
Condition:
Refurbished
Manufacturer:
PNY
Stock:
In Stock
Features
CAS latency
11
Internal memory
8 GB
Memory layout (modules x size)
1 x 8 GB
Internal memory type
DDR3L
Memory clock speed
1600 MHz
Component for
Laptop
Memory form factor
204-pin SO-DIMM
Memory voltage
1.35 V
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