TS128MSQ64V8W - Transcend 1GB DDR2-800MHz PC2-6400 non-ECC Unbuffered CL6 200-Pin SoDimm Dual Rank Memory Module

About Transcend 1GB DDR2-800, 1 GB, 1 x 1 GB, DDR2, 200-pin SO-DIMM

Transcend 1GB DDR2-800. Component for: PC/Server, Internal memory: 1 GB, Memory layout (modules x size): 1 x 1 GB, Internal memory type: DDR2, Memory form factor: 200-pin SO-DIMM, CAS latency: 6

TS128MSQ64V8W
The TS128MSQ64V8W is a 128M x 64bits DDR2-800 SO-DIMM. The TS128MSQ64V8W consists of 8pcs 64Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The TS128MSQ64V8W is a Dual In-Line Memory Module and is intended for mounting into 200-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Features:
- RoHS compliant products;
- JEDEC standard 1.8V ± 0.1V Power supply;
- VDDQ=1.8V ± 0.1V;
- Max clock Freq: 400MHZ; 800Mb/s/Pin;
- Posted CAS;
- Programmable CAS Latency: 3, 4, 5, 6;
- Programmable Additive Latency :0, 1, 2, 3, 4, 5;
- Write Latency (WL) = Read Latency (RL)-1;
- Burst Length: 4, 8(Interleave/nibble sequential);
- Programmable sequential / Interleave Burst Mode;
- Bi-directional Differential Data-Strobe (Single-ended;
- data-strobe is an optional feature);
- Off-Chip Driver (OCD) Impedance Adjustment;
- MRS cycle with address key programs;
- On Die Termination;
- Serial presence detect with EEPROM.