TS256MSQ64V8P - Transcend 2GB DDR2-800MHz PC2-6400 non-ECC Unbuffered CL5 200-Pin SoDimm Dual Rank Memory Module
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Transcend 2GB DDR2-800/PC6400 200-pin SO-DIMM 6-6-6 - 128Mx8 JetRam memory module DDR 400 MHz
2GB DDR2-800/PC6400 200-pin SO-DIMM 6-6-6 - 128Mx8 JetRam
- 2 GB DDR 400 MHz
- 200-pin SO-DIMM
- CAS latency: 4
- 1.8 V
About Transcend 2GB DDR2-800/PC6400 200-pin SO-DIMM 6-6-6 - 128Mx8 JetRam, 2 GB, DDR, 400 MHz, 200-pin SO-DIMM
Transcend 2GB DDR2-800/PC6400 200-pin SO-DIMM 6-6-6 - 128Mx8 JetRam. Internal memory: 2 GB, Internal memory type: DDR, Memory clock speed: 400 MHz, Memory form factor: 200-pin SO-DIMM, CAS latency: 4
The TS256MSQ64V8P is a 256M x 64bits DDR2-800 SO-DIMM. The TS256MSQ64V8P consists of 16pcs 128Mx8bits DDR2 SDRAMs in 68 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The TS256MSQ64V8P is a Dual In-Line Memory Module and is intended for mounting into 200-pin edge connector sockets.Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Features:
• RoHS compliant products.
• JEDEC standard 1.8V ± 0.1V Power supply.
• VDDQ=1.8V ± 0.1V.
• Max clock Freq: 400MHZ; 800Mb/s/Pin.
• Posted CAS.
• Programmable CAS Latency: 4,5,6.
• Programmable Additive Latency :0, 1,2,3 and 4.
• Write Latency (WL) = Read Latency (RL)-1.
• Burst Length: 4,8(Interleave/nibble sequential).
• Programmable sequential / Interleave Burst Mode.
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature).
• Off-Chip Driver (OCD) Impedance Adjustment.
• MRS cycle with address key programs.
• On Die Termination.
• Serial presence detect with EEPROM.


















