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TS512MSH72V1H - Transcend 4GB DDR4-2133MHz PC4-17000 ECC Unbuffered CL15 260-Pin SoDimm 1.2V Single Rank Memory Module
TS512MSH72V1H - Transcend 4GB DDR4-2133MHz PC4-17000 ECC Unbuffered CL15 260-Pin SoDimm 1.2V Single Rank Memory Module
Mfr Part#:
Availabilty: In stock
Condition:
Refurbished
GTIN:
0760557831617
760557831617
Manufacturer:
Transcend
Seeking a large quantity of TS512MSH72V1H, or have a target price in mind? Contact us at (855) 483-7810 or simply Request a Bulk Quote. Our sales team will promptly respond with a discounted price tailored to your needs.
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ContactTranscend DDR4-2133 ECC SO-DIMM 4GB
Transcend DDR4, 2133 MHz, 4GB, ECC SO-DIMM, 1Rx8, (512Mx8)x9, 1.2V, 30 µ”
- High energy efficiency
- 8 bit pre-fetch
- Burst Length: 4, 8
- 16 Banks (4 Bank Groups)
- Support DBI mode
- Support Command/Address parity detection
- Support Data Cyclic Redundancy Check (CRC) for improved data reliability
- On-die termination with ODT pin
- Serial presence detect with EEPROM
- 100% tested for stability, compatibility and performance
- Transcend DDR4, 2133 MHz, 4GB, ECC SO-DIMM, 1Rx8, (512Mx8)x9, 1.2V, 30 µ”
- 4 GB DDR4 2133 MHz
- 260-pin SO-DIMM 1 x 8 GB
- CAS latency: 15
- 1.2 V
- ECC
About Transcend DDR4-2133 ECC SO-DIMM 4GB, 4 GB, 1 x 8 GB, DDR4, 2133 MHz, 260-pin SO-DIMM
Transcend DDR4-2133 ECC SO-DIMM 4GB. Internal memory: 4 GB, Memory layout (modules x size): 1 x 8 GB, Internal memory type: DDR4, Memory clock speed: 2133 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 15, ECC
Transcend's DDR4 DRAM modules operate at a nominal voltage of just 1.2V, offering higher energy efficiency and exceptional clock speeds to cater to the demands of the embedded industry. The modules are available in multiple form factors and technologies, such as ECC and wide-temperature support. All components are of the highest quality, having been sourced directly from the world's first-tier supplier of DRAM chips and stringently tested for unparalleled compatibility, reliability, and performance.
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