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TS512MSK72W6H - Transcend 4GB DDR3-1600MHz PC3-12800 ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Single Rank Memory Module
TS512MSK72W6H - Transcend 4GB DDR3-1600MHz PC3-12800 ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Single Rank Memory Module
Mfr Part#:
Availabilty: In stock
Condition:
New
GTIN:
0760557823926
760557823926
Manufacturer:
Transcend
Seeking a large quantity of TS512MSK72W6H, or have a target price in mind? Contact us at (855) 483-7810 or simply Request a Bulk Quote. Our sales team will promptly respond with a discounted price tailored to your needs.
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ContactTranscend 4GB PC3-12800 memory module 1 x 4 GB DDR3 1600 MHz ECC
4GB DDR3, 204-pin SODIMM, 1600MHz, ECC, Unbuffer
- Laptop 4 GB DDR3 1600 MHz
- 204-pin SO-DIMM 1 x 4 GB
- CAS latency: 11
- 1.35 V
- ECC
About Transcend 4GB PC3-12800, 4 GB, 1 x 4 GB, DDR3, 1600 MHz, 204-pin SO-DIMM
Transcend 4GB PC3-12800. Component for: Laptop, Internal memory: 4 GB, Memory layout (modules x size): 1 x 4 GB, Internal memory type: DDR3, Memory clock speed: 1600 MHz, Memory form factor: 204-pin SO-DIMM, CAS latency: 11, ECC
Transcend's DDR3 Low Voltage ECC SO-DIMM offers unparalleled stability and synchronized performance to today's latest high-powered server class computing systems. Operating at a nominal voltage of just 1.35V presents several advantages for the system such as a lower electrical load on the memory controller and low power consumption. To help increase overall system reliability, Transcend's DDR3 Low Voltage ECC SO-DIMM features Error Correcting Code that monitors the data that gets transferred in and out of memory and corrects any errors found.- Low voltage operation (1.35V)
- Operates cooler and reduces chassis heat
Customer Questions
Overview
Condition:
New
Manufacturer:
Transcend
Stock:
In Stock
Features
Buffered memory type
Unregistered (unbuffered)
CAS latency
11
Internal memory
4 GB
Memory layout (modules x size)
1 x 4 GB
Internal memory type
DDR3
Memory clock speed
1600 MHz
Component for
Laptop
Memory form factor
204-pin SO-DIMM
ECC
Yes
Memory ranking
1
Memory voltage
1.35 V
Module configuration
512M x 8
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