TS64MSD64V4J-I - Transcend 512MB DDR-400MHz PC3200 non-ECC Unbuffered CL3 200-Pin SoDimm Memory Module

About Transcend DDR 200Pin SO-DIMM DDR-400 Non-ECC Memory, 0.5 GB, 1 x 0.5 GB, DDR, 200-pin SO-DIMM

Transcend DDR 200Pin SO-DIMM DDR-400 Non-ECC Memory. Component for: Laptop, Internal memory: 0.5 GB, Memory layout (modules x size): 1 x 0.5 GB, Internal memory type: DDR, Memory form factor: 200-pin SO-DIMM, CAS latency: 3

The TS64MSD64V4J-I is a 64M x 64bits Double Data Rate SDRAM high-density for DDR400. The TS64MSD64V4J-I consists of 8pcs CMOS 64Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil packages and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The TS64MSD64V4J-I is a Dual In-Line Memory Module and is intended for mounting into 200-pin edge connector sockets.

Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Features

- Industrial Temperature (TA): -40C to +85C
- Power supply: VDD= VDDQ: 2.6V ± 0.1V,
- Max clock Freq: 200MHZ.
- Double-data-rate architecture; two data transfers per
- clock cycle
- Differential clock inputs (CK and /CK)
- DLL aligns DQ and DQS transitions with CLK transition
- Commands entered on each positive CLK edge
- Auto and Self Refresh.
- Data I/O transactions on both edge of data strobe.
- Serial Presence Detect (SPD) with serial EEPROM
- SSTL-2 compatible inputs and outputs.
- MRS cycle with address key programs.
- CAS Latency (Access from column address) : 3
- Burst Length (2,4,8)
- Data Sequence (Sequential & Interleave)