TS64MSQ64V6M - Transcend 512MB DDR2-667MHz PC2-5300 non-ECC Unbuffered CL5 200-Pin SoDimm Dual Rank Memory Module

About Transcend 512MB, DDR2, PC5300, 667MHz, soDIMM 200Pin, 64bit, 1.8V,CL5, 32Mx16, Notebook Memory, 0.5 GB, DDR2, 667 MHz, 200-pin SO-DIMM

Transcend 512MB, DDR2, PC5300, 667MHz, soDIMM 200Pin, 64bit, 1.8V,CL5, 32Mx16, Notebook Memory. Internal memory: 0.5 GB, Internal memory type: DDR2, Memory clock speed: 667 MHz, Memory form factor: 200-pin SO-DIMM, CAS latency: 5

The TS64MSQ64V6M is a 32M x 64bits DDR2-667 SO-DIMM. The TS64MSQ64V6M consists of 8pcs 32Mx16its DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The TS64MSQ64V6M is a Dual In-Line Memory Module and is intended for mounting into 200-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Features
-RoHS compliant products.
-JEDEC standard 1.8V ± 0.1V Power supply
-VDDQ=1.8V ± 0.1V
-Max clock Freq: 333MHZ
-Posted CAS
-Programmable CAS Latency: 3,4,5
-Programmable Additive Latency :0, 1,2,3 and 4
-Write Latency (WL) = Read Latency (RL)-1
-Burst Length: 4,8(Interleave/nibble sequential)
-Programmable sequential / Interleave Burst Mode
-Bi-directional Differential Data-Strobe (Single-ended
data-strobe is an optional feature)
-Off-Chip Driver (OCD) Impedance Adjustment
-MRS cycle with address key programs.
-On Die Termination
-Serial presence detect with EEPROM